Band gap determination in multi-band-gap CuFeO<sub>2</sub> delafossite epitaxial thin film by photoconductivity

The photoconductivity within a wavelength range of 450-1100 nm was determined for a sample of epitaxial delafossite CuFeO2 film grown by pulsed laser deposition. The film thickness was estimated to be 75 nm. The resistance of the films was determined with four-contact van der Pauw's method and...

Descripción completa

Detalles Bibliográficos
Autores principales: Vojkovic, S., Fernandez, J., Elgueta, S., Vega, F. E., Rojas, S. D., Wheatley, R. A., Seifert, B., Wallentowitz, S., Cabrera, A. L.
Formato: Artículo (Article)
Idioma:Inglés (English)
Publicado: 2025
Materias:
Acceso en línea:https://repositorio.uc.cl/handle/11534/100827